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| HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 10A, 400V and 500V * VCE(ON): 2.5V Max. * TFALL: 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance * Anti-Parallel Diode Applications * Power Supplies * Motor Drives * Protective Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND 10N40C1D 10N40E1D 10N50C1D 10N50E1D G E NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP10N40C1D HGTP10N40E1D 400 400 20 17.5 10 75 0.6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 20 17.5 10 75 0.6 -55 to +150 UNITS V V V A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2405.5 3-20 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTP10N40C1D, HGTP10N40E1D PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V, TC = +25oC VCE = 500V, TC = +25oC VCE = 400V, TC = +125oC VCE = 500V, TC = +125oC Gate-Emitter Leakage Current Collector-Emitter On Voltage IGES VCE(ON) VGE = 20V, VCE = 0 IC = 10A, VGE = 10V IC = 17.5A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 40E1D, 50E1D 40C1D, 50C1D Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) 40E1D, 50E1D 40C1D, 50C1D Thermal Resistance Junction-to-Case Diode Forward Voltage Diode Reverse Recovery Time RJC VEC tRR IEC = 10A IEC = 10A, di/dt = 100A/s WOFF IC = 10A, VCE(CLP) = 300V, L = 50H, TJ = +100oC, VGE = 10V, RG = 50 1810 (Typ) 1070 (Typ) 1.67 2 100 1.67 2 100 J J oC/W HGTP10N50C1D, HGTP10N50E1D MIN 500 2.0 MAX 4.5 250 1000 100 2.5 3.2 6 (Typ) 19 (Typ) 50 50 400 UNITS V V A A A A nA V V V nC ns ns ns MIN 400 2.0 - MAX 4.5 250 1000 100 2.5 3.2 6 (Typ) 19 (Typ) 50 50 400 VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI IC = 5A, VCE = 10V IC = 5A, VCE = 10V IC = 10A, VCE(CLP) = 300V, L = 50H, TJ = +100oC, VGE = 10V, RG = 50 680 (Typ) 400 (Typ) 1000 500 680 (Typ) 400 (Typ) 1000 500 ns ns V ns INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-21 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves 20.0 VGE = 10V, RGEN = RGS = 100 RATED POWER DISSIPATION (%) -50 -25 0 +25 +50 +75 +100 +125 +150 +175 17.5 ICE, COLLECTOR CURRENT (A) 15.0 12.5 10.0 7.5 5.0 2.5 0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50, VGE = 0V ARE THE MIN. ALLOWABLE VALUES FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE NORMALIZED GATE THRESHOLD VOLTAGE 35 VGE = VCE, IC = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 PULSE TEST, VCE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. +25oC 5 +125oC 0 0 2.5 5.0 -40oC -50 0 +50 +100 +150 (oC) 7.5 10.0 TJ , JUNCTION TEMPERATURE VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE TC = +25oC 35 VGE = 20V ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 VGE = 4V VGE = 10V VGE = 8V VGE = 6V VGE = 7V ICE, COLLECTOR CURRENT (A) FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS 35 30 25 20 15 10 5 0 0 1 2 3 4 VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V) +25oC PULSE TEST, VGE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGE = 5V FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-22 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves (Continued) 1200 f = 0.1MHz 1000 C, CAPACITANCE (pF) VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V) 3.00 2.75 IC = 10A, VGE = 10V 2.50 IC = 10A, VGE = 15V 2.25 800 CISS 600 400 2.00 1.75 IC = 5A, VGE = 10V 200 CRSS 0 COSS 0 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 50 1.50 +25 IC = 5A, VGE = 15V +50 +75 +100 +125 +150 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE 400 TD(OFF)I, TURN OFF DELAY TIME (ns) IC = 20A, VGE = 10V, VCL = 300V L =25H, RG = 25 FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE WOFF = IC * VCEdt VGE IC 300 VCE 200 100 0 +25 +50 +75 +100 +125 TJ, JUNCTION TEMPERATURE (oC) +150 FIGURE 9. TYPICAL TURN-OFF DELAY TIME 800 700 600 tFI , FALL TIME (ns) IC = 5A, VGE = 10V, VCL = 300V L = 50H, RG = 50 FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 700 600 tFI , FALL TIME (ns) IC = 10A, VGE = 10V, VCL = 300V L = 50H, RG = 50 40E1/50E1 500 400 40C1/50C1 300 200 100 0 +25 500 400 40E1/50E1 40C1/50C1 300 200 100 0 +25 +50 +75 +100 +125 +150 +50 +75 +100 +125 +150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 5A) FIGURE 12. TYPICAL FALL TIME (IC = 10A) 3-23 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves (Continued) 1000 WOFF , TURN-OFF ENERGY LOSS (J) 900 800 700 600 500 400 300 200 100 0 +25 10A, 40E1/50E1 20A, 40C1/50C1 L = 25H, RG = 25 20A, 40E1/50E1 VCE, COLLECTOR-EMITTER VOLTAGE (V) VGE = 10V, VCE(CLP) = 300V 500 10 RL = 25 IG(REF) = 0.76mA VCC = BVCES 375 VGE = 10V GATEEMITTER VOLTAGE VCC = 0.25BVCES 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. COLLECTOR-EMITTER VOLTAGE 0 +50 +75 +100 +125 +150 TJ, JUNCTION TEMPERATURE (oC) 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0 4 8 VGE, GATE-EMITTER VOLTAGE (V) 20 6 125 10A, 40C1/50C1 2 FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260) 100 IEC , EMITTER-COLLECTOR CURRENT (A) TYPICAL DIODE ON VOLTAGE tRR, REVERSE RECOVERY TIME (ns) TYPICAL REVERSE RECOVERY TIME 60 50 40 30 20 10 dIEC/dT 100A/s VR = 30V, TJ = +25oC 10 TJ = +150oC TJ = +100oC 1 TJ = +25oC TJ = -50oC 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 VEC, EMITTER-COLLECTOR (V) 4 6 8 10 12 14 16 18 IEC , EMITTER-COLLECTOR CURRENT (A) FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR VOLTAGE vs CURRENT FOR ALL TYPES FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR ALL TYPES Test Circuit RL = 13 L = 50H VCC VCE(CLP)= 300V 1/RG = 1/RGEN + 1/RGE RGEN = 100 20V 0V RGE = 100 FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 3-24 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-25 |
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